DocumentCode :
3079881
Title :
Enhanced Si quantum dot luminescence in sirich SiC thin-film light emitting diode
Author :
Tsai, Ling-Hsuan ; Tai, Hung-Yu ; Wu, Chung-Lun ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
839
Lastpage :
840
Abstract :
A Si quantum dot enhanced electroluminescence at 580 nm from the Si-rich SixC1-x p-i-n LED grown by PECVD at silane-rich condition is demonstrated with a power-current slope of 0.2 μW/A at bias of 8.8 V.
Keywords :
electroluminescence; elemental semiconductors; light emitting diodes; p-i-n diodes; plasma CVD; semiconductor quantum dots; semiconductor thin films; silicon; silicon compounds; thin film devices; wide band gap semiconductors; PECVD; Si-SiC; Si-rich SiC thin-film light emitting diode; p-i-n LED; power-current slope; quantum dot enhanced electroluminescence; quantum dot luminescence; silane-rich condition; voltage 8.8 V; wavelength 580 nm; Conductivity; Films; Indium tin oxide; Light emitting diodes; PIN photodiodes; Silicon; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276656
Filename :
6276656
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3079881
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