Title :
Electron-beam lithographed metamaterial devices operating in the terahertz region
Author :
Chicki, N. ; Di Gennaro, E. ; Esposito, E. ; Andreone, A.
Author_Institution :
Dept. of Phys., Univ. of Naples Federico II, Naples, Italy
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
Direct electron-beam lithography (EBL) was exploited to fabricate metamaterial devices operating in the terahertz (THz) region. Simulation show that, in order to reach the required frequency range, optimized metallic structures deposited on silicon must have submicron features. The effect of an external parameter, such as the substrate doping, is also studied.
Keywords :
electron beam lithography; metamaterials; optoelectronic devices; electron-beam lithography; frequency range; metamaterial devices; submicron features; substrate doping; terahertz region; Conductivity; Conferences; Frequency; Geometry; Liquid crystals; Metamaterials; Polymers; Resists; Silicon; Substrates;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379652
