Double-barrier superlattice infrared photodetector combined with quantum well infrared photodetector for operation at high temperature and low bias

Author

Lin, Shih-Hung ; Chang, Che-Wei ; Kuan, Chieh-Hsiung ; Feng, J.Y. ; Lay, T.S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

Nov. 3 2009-Oct. 6 2009

Firstpage

7

Lastpage

8

Abstract

We have designed a double-barrier superlattice infrared photodetector combined with quantum well infrared photodetector which has a superlattice (SL) sandwiched between the thick and graded barriers then multiple quantum wells(MQWs) are inserted in the right side of them . The two barriers can let the photoelectrons to bounce back and forth then the photoelectrons inject through the MQWs which are used as noise filter. The detector shows high-temperature operation (~110 K) at low bias. The associated detectivity is also optimized so this device is the promising candidate of a pixel in the focal plane array.

Keywords

focal planes; high-temperature electronics; infrared detectors; quantum well devices; semiconductor superlattices; double-barrier superlattice infrared photodetector; focal plane array; high temperature; high-temperature operation; low bias; multiple quantum wells; quantum well infrared photodetector; Conferences; Dark current; Detectors; Etching; Gallium arsenide; Photoconductivity; Photodetectors; Quantum well devices; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Conference_Location

Turunc-Marmaris

Print_ISBN

978-1-4244-3848-8

Electronic_ISBN

98-1-4244-3849-5

Type

conf

DOI

10.1109/TERAMIR.2009.5379654

Filename

5379654