Title :
High speed sensing using ion sensitive field effect transistors
Author :
Cumming, D.R.S. ; Shields, P.N. ; Piechocinski, M.S. ; Nemeth, B.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We present new preliminary data from arrays of ion sensor field effect transistors (ISFETs). Two devices are presented. The first consists of a planar array of ISFETs that are operated as an ion image sensor enabling the direct observation of ion flow over the surface of the chip in real-time. The second is an innovative form of Coulter-counter that is fully implemented in a CMOS-MEMS format. The device is tested as a cytometer by observing the flow of red-blood cells.
Keywords :
CMOS image sensors; chemical sensors; ion sensitive field effect transistors; microsensors; sensor arrays; CMOS-MEMS format; chip surface; cytometer; high speed sensing; ion flow; ion image sensor; ion sensitive field effect transistor; planar array; red-blood cell flow; sensor array; CMOS integrated circuits; CMOS technology; Educational institutions; Impedance; Scholarships;
Conference_Titel :
Advances in Sensors and Interfaces (IWASI), 2011 4th IEEE International Workshop on
Conference_Location :
Savelletri di Fasano
Print_ISBN :
978-1-4577-0623-3
Electronic_ISBN :
978-1-4577-0622-6
DOI :
10.1109/IWASI.2011.6004687
