• DocumentCode
    3080441
  • Title

    High speed sensing using ion sensitive field effect transistors

  • Author

    Cumming, D.R.S. ; Shields, P.N. ; Piechocinski, M.S. ; Nemeth, B.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2011
  • fDate
    28-29 June 2011
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    We present new preliminary data from arrays of ion sensor field effect transistors (ISFETs). Two devices are presented. The first consists of a planar array of ISFETs that are operated as an ion image sensor enabling the direct observation of ion flow over the surface of the chip in real-time. The second is an innovative form of Coulter-counter that is fully implemented in a CMOS-MEMS format. The device is tested as a cytometer by observing the flow of red-blood cells.
  • Keywords
    CMOS image sensors; chemical sensors; ion sensitive field effect transistors; microsensors; sensor arrays; CMOS-MEMS format; chip surface; cytometer; high speed sensing; ion flow; ion image sensor; ion sensitive field effect transistor; planar array; red-blood cell flow; sensor array; CMOS integrated circuits; CMOS technology; Educational institutions; Impedance; Scholarships;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Sensors and Interfaces (IWASI), 2011 4th IEEE International Workshop on
  • Conference_Location
    Savelletri di Fasano
  • Print_ISBN
    978-1-4577-0623-3
  • Electronic_ISBN
    978-1-4577-0622-6
  • Type

    conf

  • DOI
    10.1109/IWASI.2011.6004687
  • Filename
    6004687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3080441