DocumentCode :
3080790
Title :
An in-line contact configuration for the Hall sensor device
Author :
Wipatawit, Praphaphan ; Wangtong, Salisa ; Trithaveesak, Opas ; Hruanun, Chamdet ; Poyai, Ampom
Author_Institution :
Nat. Electron. & Comput. Technol. Center, Thai Microelectron. Center, Prathumthani, Thailand
fYear :
2011
fDate :
28-29 June 2011
Firstpage :
153
Lastpage :
156
Abstract :
This paper introduces a Hall sensor device with an inline contact configuration geometry, similar to the Vertical Hall Device (VHD) but unlike the latter, is sensitive to magnetic fields perpendicular to the surface of the sensor. It is fabricated using a standard 0.8μm CMOS process provided by Thai Microelectronic Center (TMEC). Measurements made of the components of magnetic fields in 3-axes (B⃗x, B⃗y and B⃗z) have shown strong responses to fields perpendicular to the B⃗x plane of the sensor, but completely insensitivity to in-plane magnetic fields, B⃗y and B⃗z. The best current-related sensitivity reaches a maximum of 20μV/AT at an applied current of 1mA. Hall voltages are linear up to 500mT. Angular measurements performed show good angular selectivity. In-line contact configuration devices will be good potential candidates as 3D magnetic vector sensors.
Keywords :
CMOS integrated circuits; Hall effect transducers; angular measurement; geometry; 3D magnetic vector sensors; CMOS process; Hall sensor device; Thai Microelectronic Center; angular measurements; current-related sensitivity; in-plane magnetic fields; inline contact configuration geometry; size 0.8 mum; vertical hall device; CMOS integrated circuits; Geometry; Hafnium; Magnetic field measurement; Magnetic sensors; Rotation measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Sensors and Interfaces (IWASI), 2011 4th IEEE International Workshop on
Conference_Location :
Savelletri di Fasano
Print_ISBN :
978-1-4577-0623-3
Electronic_ISBN :
978-1-4577-0622-6
Type :
conf
DOI :
10.1109/IWASI.2011.6004707
Filename :
6004707
Link To Document :
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