DocumentCode
3080972
Title
Passive GaAs FET mixer architectures for ultra high linearity requirements
Author
Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg
Author_Institution
Microwave Eng. Group, Technische Univ. Berlin, Germany
fYear
2005
fDate
25-28 July 2005
Firstpage
209
Lastpage
212
Abstract
This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Different balancing topologies, design process and results are being discussed.
Keywords
III-V semiconductors; UHF field effect transistors; UHF mixers; field effect transistor circuits; gallium arsenide; network synthesis; network topology; 1 GHz; 100 MHz; 900 MHz; GaAs; balancing topologies; design process; passive GaAs FET mixer; ultra high linearity requirements; Gallium arsenide; Linearity; Low pass filters; Microwave FETs; Mixers; PHEMTs; RF signals; Radio frequency; Topology; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN
0-7803-9341-4
Type
conf
DOI
10.1109/IMOC.2005.1579979
Filename
1579979
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