DocumentCode :
3080972
Title :
Passive GaAs FET mixer architectures for ultra high linearity requirements
Author :
Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg
Author_Institution :
Microwave Eng. Group, Technische Univ. Berlin, Germany
fYear :
2005
fDate :
25-28 July 2005
Firstpage :
209
Lastpage :
212
Abstract :
This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Different balancing topologies, design process and results are being discussed.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF mixers; field effect transistor circuits; gallium arsenide; network synthesis; network topology; 1 GHz; 100 MHz; 900 MHz; GaAs; balancing topologies; design process; passive GaAs FET mixer; ultra high linearity requirements; Gallium arsenide; Linearity; Low pass filters; Microwave FETs; Mixers; PHEMTs; RF signals; Radio frequency; Topology; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN :
0-7803-9341-4
Type :
conf
DOI :
10.1109/IMOC.2005.1579979
Filename :
1579979
Link To Document :
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