DocumentCode
3081439
Title
Effect of material composition on eigenstates of a three-dimensional heterostructure quantum ring in presence of electric field
Author
Bhattacharyya, Souvik ; Deyasi, Arpan ; Das, Nikhil R.
Author_Institution
Dept. of Comp. Sci. & Eng., Modern Inst. of Eng. & Technol., Bandel, India
fYear
2012
fDate
7-9 Dec. 2012
Firstpage
649
Lastpage
652
Abstract
Eigenenergy of carriers of a three-dimensional quantum ring with cylindrical symmetry has been analytically investigated in the presence of electric field applied perpendicular to the plane of ring. Energy is calculated by varying all possible dimensions of the ring independently for different material compositions of AlxGa1-xN material, taking as an example. Results are compared with the case when field is absent. Energy states are also computed for variation of electric field upto a wide range for different compositions, and also with bandgap of the heterostrucutre. Parabolic band structure is considered for simulation purpose and upto lowest three confinement states are computed.
Keywords
III-V semiconductors; aluminium compounds; band structure; gallium compounds; semiconductor quantum wires; wide band gap semiconductors; AlxGa1-xN; carrier eigen energy; confinement states; cylindrical symmetry; eigenstates; electric field; energy states; material composition; parabolic band structure; three-dimensional heterostructure quantum ring; Eigenvalues and eigenfunctions; Electric fields; Energy states; Materials; Quantum computing; Quantum dot lasers; Quantum dots; Eigenenergy; Electric field; Material composition; Three-dimensional quantum ring;
fLanguage
English
Publisher
ieee
Conference_Titel
India Conference (INDICON), 2012 Annual IEEE
Conference_Location
Kochi
Print_ISBN
978-1-4673-2270-6
Type
conf
DOI
10.1109/INDCON.2012.6420698
Filename
6420698
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