• DocumentCode
    3081439
  • Title

    Effect of material composition on eigenstates of a three-dimensional heterostructure quantum ring in presence of electric field

  • Author

    Bhattacharyya, Souvik ; Deyasi, Arpan ; Das, Nikhil R.

  • Author_Institution
    Dept. of Comp. Sci. & Eng., Modern Inst. of Eng. & Technol., Bandel, India
  • fYear
    2012
  • fDate
    7-9 Dec. 2012
  • Firstpage
    649
  • Lastpage
    652
  • Abstract
    Eigenenergy of carriers of a three-dimensional quantum ring with cylindrical symmetry has been analytically investigated in the presence of electric field applied perpendicular to the plane of ring. Energy is calculated by varying all possible dimensions of the ring independently for different material compositions of AlxGa1-xN material, taking as an example. Results are compared with the case when field is absent. Energy states are also computed for variation of electric field upto a wide range for different compositions, and also with bandgap of the heterostrucutre. Parabolic band structure is considered for simulation purpose and upto lowest three confinement states are computed.
  • Keywords
    III-V semiconductors; aluminium compounds; band structure; gallium compounds; semiconductor quantum wires; wide band gap semiconductors; AlxGa1-xN; carrier eigen energy; confinement states; cylindrical symmetry; eigenstates; electric field; energy states; material composition; parabolic band structure; three-dimensional heterostructure quantum ring; Eigenvalues and eigenfunctions; Electric fields; Energy states; Materials; Quantum computing; Quantum dot lasers; Quantum dots; Eigenenergy; Electric field; Material composition; Three-dimensional quantum ring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    India Conference (INDICON), 2012 Annual IEEE
  • Conference_Location
    Kochi
  • Print_ISBN
    978-1-4673-2270-6
  • Type

    conf

  • DOI
    10.1109/INDCON.2012.6420698
  • Filename
    6420698