DocumentCode
3081904
Title
A comparative study of the effects of CH4/H2 versus CO/H2 gas mixture on the quality of CVD diamond films deposited on silicon substrates
Author
Bataineh, Mohannad ; Khatami, Saeid
Author_Institution
Univ. of West Florida, Pensacola, FL, USA
fYear
2005
fDate
8-10 April 2005
Firstpage
45
Lastpage
48
Abstract
This paper investigates the quantifiable effects of the gas flow mixture on the structural quality of CVD diamond films. The experimental study includes two types of gas flow mixtures: (a) CH4/H2 and (b) CO/H2. All films are grown in 5" quartz dome, 3" substrate reactor. The reactor output variables, which include film morphology expressed by the growth parameter α and grain size, structural quality as measured by Raman spectra and scanning electron microscopy (SEM) techniques, linear growth rate, and carbon conversion efficiency, are examined and a complete analysis is presented in this paper.
Keywords
Raman spectra; chemical vapour deposition; crystal morphology; diamond; elemental semiconductors; gas mixtures; grain size; scanning electron microscopy; semiconductor growth; 3 in; 5 in; C-Si; CO-H2; CO/H2 gas mixture; CVD diamond films; H2; Raman spectra; SEM; Si; carbon conversion efficiency; film morphology; gas flow mixture; grain size; growth parameter; linear growth rate; methane/H2 gas mixture; quartz dome reactor; reactor output variables; scanning electron microscopy; silicon substrates; structural quality; Atomic layer deposition; Fluid flow; Geometry; Hydrogen; Inductors; Morphology; Scanning electron microscopy; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SoutheastCon, 2005. Proceedings. IEEE
Print_ISBN
0-7803-8865-8
Type
conf
DOI
10.1109/SECON.2005.1423214
Filename
1423214
Link To Document