Title :
A comparative study of the effects of CH4/H2 versus CO/H2 gas mixture on the quality of CVD diamond films deposited on silicon substrates
Author :
Bataineh, Mohannad ; Khatami, Saeid
Author_Institution :
Univ. of West Florida, Pensacola, FL, USA
Abstract :
This paper investigates the quantifiable effects of the gas flow mixture on the structural quality of CVD diamond films. The experimental study includes two types of gas flow mixtures: (a) CH4/H2 and (b) CO/H2. All films are grown in 5" quartz dome, 3" substrate reactor. The reactor output variables, which include film morphology expressed by the growth parameter α and grain size, structural quality as measured by Raman spectra and scanning electron microscopy (SEM) techniques, linear growth rate, and carbon conversion efficiency, are examined and a complete analysis is presented in this paper.
Keywords :
Raman spectra; chemical vapour deposition; crystal morphology; diamond; elemental semiconductors; gas mixtures; grain size; scanning electron microscopy; semiconductor growth; 3 in; 5 in; C-Si; CO-H2; CO/H2 gas mixture; CVD diamond films; H2; Raman spectra; SEM; Si; carbon conversion efficiency; film morphology; gas flow mixture; grain size; growth parameter; linear growth rate; methane/H2 gas mixture; quartz dome reactor; reactor output variables; scanning electron microscopy; silicon substrates; structural quality; Atomic layer deposition; Fluid flow; Geometry; Hydrogen; Inductors; Morphology; Scanning electron microscopy; Semiconductor films; Silicon; Substrates;
Conference_Titel :
SoutheastCon, 2005. Proceedings. IEEE
Print_ISBN :
0-7803-8865-8
DOI :
10.1109/SECON.2005.1423214
