DocumentCode
3081905
Title
The strain-controlled GaN growth on Si by RF-MBE
Author
Tajimi, Daiki ; Igaki, Tatuhiro ; Sugiura, Youhei ; Yamaguchi, Tomohiro ; Honda, Tohru
Author_Institution
Dept. of Electr. Eng. & Electron., Kogakuin Univ., Tokyo, Japan
fYear
2012
fDate
2-6 July 2012
Firstpage
607
Lastpage
608
Abstract
A (GaN/AlN) alternating-source-feeding (ASF) buffer layer was introduced in the molecular beam epitaxy (MBE) growth of GaN film on (111) Si substrate. Residual strain in the GaN film was reduced by using the ASF buffer layer.
Keywords
III-V semiconductors; gallium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; (111) Si substrate; GaN; RF-MBE; Si; alternating-source-feeding buffer layer; molecular beam epitaxy; residual strain-controlled gallium growth; semiconductor thin films; Buffer layers; Gallium nitride; Molecular beam epitaxial growth; Silicon; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location
Busan
ISSN
2166-8884
Print_ISBN
978-1-4673-0976-9
Electronic_ISBN
2166-8884
Type
conf
DOI
10.1109/OECC.2012.6276752
Filename
6276752
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