Extreme low-voltage floating-gate CMOS transconductance amplifier

Author

Berg, Yngvar ; Aunet, Snorre ; Ness, O. ; Gundersen, Henning ; Høvin, Mats

Author_Institution

Dept. of Inf., Oslo Univ., Norway

Volume

1

fYear

2001

fDate

6-9 May 2001

Firstpage

37

Abstract

In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages down to 0.3 V in a standard digital double poly CMOS process. The amplifier consists of three subcircuits, the single input analog FG inverter, the additive (double input) analog FG inverter with tunable gain and a FG digital inverter. Preliminary measurements of the transconductance amplifier are provided

Keywords

CMOS analogue integrated circuits; circuit tuning; differential amplifiers; gain control; low-power electronics; operational amplifiers; 0.3 V; additive analog inverter; double input analog inverter; double poly CMOS process; extreme LV transconductance amplifier; floating gate digital inverter; floating-gate CMOS transconductance amplifier; rail-to-rail operation; single input analog inverter; tunable gain; ultra low-voltage CMOS OTA; ultra low-voltage operation; CMOS process; CMOS technology; Capacitance; Differential amplifiers; Informatics; Inverters; MOS devices; Threshold voltage; Transconductance; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921782

Filename

921782