Title :
Extreme low-voltage floating-gate CMOS transconductance amplifier
Author :
Berg, Yngvar ; Aunet, Snorre ; Ness, O. ; Gundersen, Henning ; Høvin, Mats
Author_Institution :
Dept. of Inf., Oslo Univ., Norway
Abstract :
In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages down to 0.3 V in a standard digital double poly CMOS process. The amplifier consists of three subcircuits, the single input analog FG inverter, the additive (double input) analog FG inverter with tunable gain and a FG digital inverter. Preliminary measurements of the transconductance amplifier are provided
Keywords :
CMOS analogue integrated circuits; circuit tuning; differential amplifiers; gain control; low-power electronics; operational amplifiers; 0.3 V; additive analog inverter; double input analog inverter; double poly CMOS process; extreme LV transconductance amplifier; floating gate digital inverter; floating-gate CMOS transconductance amplifier; rail-to-rail operation; single input analog inverter; tunable gain; ultra low-voltage CMOS OTA; ultra low-voltage operation; CMOS process; CMOS technology; Capacitance; Differential amplifiers; Informatics; Inverters; MOS devices; Threshold voltage; Transconductance; Tunable circuits and devices;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921782
