Tapering and size reduction of single-mode silicon waveguides by maskless RIE

Author

Chandran, Saravanan ; Das, Biplab Kanti

Author_Institution

Dept. of Electr. Eng., IIT Madras, Chennai, India

fYear

2012

fDate

2-6 July 2012

Firstpage

655

Lastpage

656

Abstract

Two-step reactive ion etching process has been optimized to demonstrate small cross-section single-mode silicon waveguides. This technique has helped to reduce the insertion loss of compact integrated photonic devices in SOI platform up to 3 dB.

Keywords

integrated optics; optical losses; optical waveguides; silicon-on-insulator; sputter etching; SOI platform; Si; compact integrated photonic devices; insertion loss; maskless RIE; size reduction; small cross-section single-mode silicon waveguides; tapering reduction; two-step reactive ion etching; Couplers; Optical losses; Optical waveguides; Periodic structures; Photonics; Silicon; Silicon on insulator technology; integrated optics; silicon photonics; silicon-on-insulator; waveguide; waveguide tapering;

fLanguage

English

Publisher

ieee

Conference_Titel

Opto-Electronics and Communications Conference (OECC), 2012 17th

Conference_Location

Busan

ISSN

2166-8884

Print_ISBN

978-1-4673-0976-9

Electronic_ISBN

2166-8884

Type

conf

DOI

10.1109/OECC.2012.6276776

Filename

6276776

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3082430