DocumentCode :
3082528
Title :
Boron-doped zinc oxide thin films fabricated by ultrasonic spray pyrolysis
Author :
Lee, Shao-Yi ; Lan, Wen-How ; Chao, Wei-Min ; Tsai, Chun-Wei ; Shih, Ming-Chang ; Wu, Yi-Da ; Chou, Yi-Chun ; Hsu, Yu-Ting
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
665
Lastpage :
666
Abstract :
Boron doping on the structural, optical and electrical properties in BZO films fabricated by spray pyrolysis were investigated. The carrier concentration of ~1019cm-3 and optical transmittance about 90% in the infrared region was achieved.
Keywords :
II-VI semiconductors; boron; carrier density; carrier mobility; electrical conductivity; electrical resistivity; grain size; infrared spectra; pyrolysis; semiconductor doping; semiconductor growth; semiconductor thin films; spray coating techniques; transparency; ultrasonic effects; wide band gap semiconductors; zinc compounds; ZnO:B; boron doping; boron-doped zinc oxide thin films; carrier concentration; carrier mobility; electrical conductivity; electrical properties; electrical resistivity; grain size; optical properties; optical transmittance; structural properties; transparency; ultrasonic spray pyrolysis; Acoustics; Boron; Doping; Ions; Optical films; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276781
Filename :
6276781
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3082528
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