DocumentCode :
3082628
Title :
Performance characterization of triple-junction GaAs Solar Cell with double layers AR-coating and Sub-Wavelength AR-coating
Author :
Syu, J.K. ; Ho, W.-J. ; Liu, J.J. ; Lee, Y.Y. ; Liao, C.C. ; Wu, J.Y. ; Chiu, Y.C. ; Shiao, H.P.
Author_Institution :
Win Semicond. Corp., Taoyuan, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
675
Lastpage :
676
Abstract :
The reflective spectrum and the incident angle effects of double-layers AR-coating and Sub-Wavelength AR-coating on the triple-junction GaAs Solar Cell are characterized by short-circuit current (Isc), open-circuit voltage (Voc), and conversion efficiency (η).
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; reflectivity; solar cells; GaAs; conversion efficiency; double-layers AR-coating; incident angle effects; open-circuit voltage; reflective spectrum; short-circuit current; subwavelength AR-coating; triple junction GaAs solar cell; Coatings; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Reflectivity; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276786
Filename :
6276786
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3082628
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