Title :
Angle-resolved XPS measurements of GaN and InN grown by RF-MBE
Author :
Yamaguchi, T. ; Amiya, R. ; Tajimi, D. ; Hayashi, M. ; Sugiura, Y. ; Honda, T. ; Uematsu, N. ; Araki, T. ; Nanishi, Y.
Author_Institution :
Dept. of Inf. & Commun. Eng., Kogakuin Univ., Tokyo, Japan
Abstract :
The surface band bending was investigated by angle-resolved XPS measurements in both metal-polar and N-polar GaN and InN films grown by RF-MBE. Clear difference on the bending direction was observed between GaN and InN films.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; surface states; wide band gap semiconductors; GaN; InN; N- polar indium nitride films; angle resolved X-ray photoelectron spectra; angle resolved XPS; metal-polar gallium nitride films; radio frequency plasma-assisted molecular beam epitaxy; surface band bending; Educational institutions; Electric fields; Electric potential; Films; Gallium nitride; Photonic band gap; Semiconductor device measurement;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276787
