Modeling and characterization of carbon-based heterogeneous interconnects for 3-D ICs

In this paper, one novel heterogeneous interconnect scheme, which combines the graphene-built horizontal interconnects and vertical through silicon carbon nanotube bundle vias (TS-CNTBV), is proposed and investigated theoretically. The equivalent circuit models for them are presented and combined. The anomalous skin effect (ASE) is treated appropriately for graphene-built interconnects. The distributed parameters as well as transmission characteristics are obtained numerically. This work provides some useful information about carbon-based interconnects where the advantages of carbon nanomaterials can be exploited for the development of 3-D ICs.