Title :
Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate
Author :
Lee, Y.U. ; Woo, J.H. ; Choi, E. ; Kim, E.S. ; Kang, B. ; Kim, J. ; Park, B.C. ; Kim, J.H. ; Wu, J.W.
Author_Institution :
Dept. of Phys., Ewha Womans Univ., Seoul, South Korea
Abstract :
Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.
Keywords :
Q-factor; carrier density; doping profiles; elemental semiconductors; metamaterials; photolithography; semiconductor doping; silicon; substrates; terahertz wave spectra; Si; dopant carrier density; doping level; meta-resonance control; photolithography; quality factor; resonance peak position; silicon substrate; terahertz metamaterials; terahertz spectra; Charge carrier density; Dielectrics; Electromagnetics; Lattices; Metamaterials; Silicon; Substrates;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276793
