DocumentCode :
3082853
Title :
CIGS absorption layer prepared by non-vacuum technique for solar cells
Author :
Liu, Chung Ping ; Chuang, Chuan Lung ; Chang, Ming Wei
Author_Institution :
Dept. of Photonics Eng., Yuan Ze Univ., Chungli, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
693
Lastpage :
694
Abstract :
CIGS absorption layer for solar cells prepared by sol-gel method and sintering with a heating rate of 15°C/sec and a holding time of 7.5 min. Measurements indicate that the film sample Cu0.976In0.811Ga0.277Se1.935 is favorable.
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sintering; sol-gel processing; solar cells; ternary semiconductors; CIGS absorption layer; Cu0.976In0.811Ga0.277Se1.935; heating rate; holding time; nonvacuum technique; sintering; sol-gel method; solar cells; Absorption; Films; Gallium; Heating; Nanoparticles; Photovoltaic cells; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276795
Filename :
6276795
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3082853
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