Title :
Analysis of electro-thermal-stress failure of the LDMOS FET under HPM pulses
Author :
Wei-Feng Zhou ; Liang Zhou ; Jun-Fa Mao ; Hong-Li Peng ; Wen-Yan Yin
Author_Institution :
Key Lab. of Minist. of Educ. of Design & Electromagn. Compatibility of High Speed Electron., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
This article discusses a laterally diffused MOS (LDMOS) FET´s thermal-stress failure test experiment under high-power microwave (HPM) pulses with different pulse widths and describes the 2-D transient coupled electro-thermal-stress (E-T-S) simulation of its structure model via finite-element method (FEM). The test experiment system mainly consists of an HPM generator, an oscilloscope, some attenuators and couplers. The thermal-stress failure is explained by some experimental phenomenon and the failure temperature is calculated via the FEM code with the measured HPM pulses. Furthermore, the transient thermal and stress distributions of the high power device are achieved and the temperature profile is verified by the commercial software of COMSOL.
Keywords :
failure analysis; finite element analysis; power MOSFET; thermal stresses; 2D transient coupled electro-thermal-stress simulation; COMSOL; E-T-S simulation; FEM; HPM generator; HPM pulses; LDMOS FET; attenuators; couplers; finite-element method; high power device; high-power microwave pulses; laterally diffused MOS FET; oscilloscope; stress distributions; structure model; temperature profile; thermal-stress failure test experiment; transient thermal distributions; Copper; Electric breakdown; Finite element analysis; Mathematical model; Stress; Temperature measurement; Thermal stresses; FEM; HPM pulse; LDMOS; electro-thermal-stress; interconnection; structure model; thermal and stress failure;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
DOI :
10.1109/EDAPS.2013.6724425
