Title :
A 2.7 V 200 kHz 49 dBm-IIP3 28 nV//spl radic/Hz input-referred-noise fully-balanced gm-C filter IC
Author :
Itakura, T. ; Ueno, Tomohiro ; Tanimoto, Hiroshi ; Yasuda, Akira ; Fujimoto, Richard ; Arai, Tamio ; Kokatsu, H.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A 0.1 dB passband-ripple 4th-order Chebyshev gm-C filter is fabricated using a BiCMOS process with n-p-n f/sub T/,of 12 GHz and CMOS minimum gate length of 0.8 /spl mu/m. CMOS transistors are used in D-to-A converters for DC offset cancellation. The 5/spl times/5 mm/sup 2/ chip includes I/Q filters, D-to-A converters and a bias circuit. The silicon active area for the filter is about 1.2 mm/sup 2//channel. The filter operates at 2.7 V and consumes 11.5 mA/channel.
Keywords :
silicon; 0.8 micron; 2.7 V; 200 kHz; 4th-order Chebyshev filter; BiCMOS process; DACs; DC offset cancellation; I/Q filters; Si; bias circuit; fully-balanced gm-C filter IC; Capacitance; Capacitors; Distortion; Low pass filters; Passband; Resistors; Semiconductor device noise; Transconductance; Transconductors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4344-1
DOI :
10.1109/ISSCC.1998.672443
