• DocumentCode
    3083133
  • Title

    A charge based compact model for enhancement mode PMOSFETs

  • Author

    Nassar, Christopher James ; Revelli, Joseph ; Bowman, Robert John ; Williams, Carlo Kosik

  • Author_Institution
    Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA
  • fYear
    2009
  • fDate
    25-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    30
  • Abstract
    The paper presents a collection of slides that discusses a charge based compact model for enhancement mode PMOSFET operating in accumulation. The discussion includes silicon-on-glass substrates, RIT SiOG CMOS process, CMOS device operation, PACC model requirements, previous PACC modeling attemps, PACC model derivation (core model), PACC model results, fixed interface change, outstanding issues and future works.
  • Keywords
    CMOS integrated circuits; MOSFET; elemental semiconductors; glass; semiconductor device models; silicon; silicon-on-insulator; CMOS device operation; PACC model; RIT SiOG CMOS process; Si-SiO2; charge-based compact model; enhancement mode PMOSFET; silicon-on-glass substrates; CMOS process; Circuit simulation; Glass; Implants; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
  • Conference_Location
    London
  • Print_ISBN
    978-1-4244-4373-4
  • Electronic_ISBN
    978-1-4244-4374-1
  • Type

    conf

  • DOI
    10.1109/CTFT.2009.5379840
  • Filename
    5379840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3083133