Title :
A charge based compact model for enhancement mode PMOSFETs
Author :
Nassar, Christopher James ; Revelli, Joseph ; Bowman, Robert John ; Williams, Carlo Kosik
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
The paper presents a collection of slides that discusses a charge based compact model for enhancement mode PMOSFET operating in accumulation. The discussion includes silicon-on-glass substrates, RIT SiOG CMOS process, CMOS device operation, PACC model requirements, previous PACC modeling attemps, PACC model derivation (core model), PACC model results, fixed interface change, outstanding issues and future works.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; glass; semiconductor device models; silicon; silicon-on-insulator; CMOS device operation; PACC model; RIT SiOG CMOS process; Si-SiO2; charge-based compact model; enhancement mode PMOSFET; silicon-on-glass substrates; CMOS process; Circuit simulation; Glass; Implants; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location :
London
Print_ISBN :
978-1-4244-4373-4
Electronic_ISBN :
978-1-4244-4374-1
DOI :
10.1109/CTFT.2009.5379840
