Title :
Thermal modeling, analysis, and management of high-power GaN transistors
Author :
Wen-Sheng Zhao ; Sen-Sen Li ; Rui Zhang ; Wen-Yan Yin
Author_Institution :
State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
Abstract :
A thermal circuit model for high power GaN transistor is constructed in this paper. Based on this model, the temperature rise in GaN transistor can be fast captured accurately. Further, the graphene layer is inserted below GaN layer to serve as heat spreader. It has been demonstrated that by introducing graphene layer, the maximum temperature rise of GaN transistor can be effectively suppressed, and its performance and reliability can be thereby improved.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; power semiconductor devices; semiconductor device packaging; thermal analysis; thermal management (packaging); wide band gap semiconductors; GaN; graphene layer; heat spreader; high power transistors; temperature rise; thermal analysis; thermal management; thermal modeling; transistor performance; transistor reliability; Decision support systems; Noise measurement; Packaging; High-power GaN transistor; graphene; themral circuit model; thermal management;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
DOI :
10.1109/EDAPS.2013.6724434
