• DocumentCode
    3083184
  • Title

    Modeling the floating-body-effect-induced drain current behavior of PD SOI NMOS device via SPICE BJT/MOS model approach

  • Author

    Su, J.S. ; Kuo, James B.

  • Author_Institution
    Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    25-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    29
  • Abstract
    The presentation of slides shows the effective use of SPICE BJT/MOS model approach in PD SOI NMOS device modelling the floating body effect induced drain current behavior. And it also discussed the evolution of CMOS VLSI circuit versus the poly-TFT approach.
  • Keywords
    CMOS integrated circuits; MIS devices; SPICE; VLSI; bipolar transistors; semiconductor device models; silicon-on-insulator; CMOS VLSI circuit; PD SOI NMOS device modelling; SPICE BJT-MOS model approach; Si; floating-body-effect-induced drain current behavior modelling; poly-TFT approach; MOS devices; SPICE;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
  • Conference_Location
    London
  • Print_ISBN
    978-1-4244-4373-4
  • Electronic_ISBN
    978-1-4244-4374-1
  • Type

    conf

  • DOI
    10.1109/CTFT.2009.5379842
  • Filename
    5379842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3083184