Integrated 130 nm CMOS passive mixer for 5 GHz WLAN applications

An integrated 130 nm CMOS mixer for 5 GHz WLAN applications is proposed. A resistive double balanced concept has been chosen as part of a half RF super-heterodyne receiver architecture. The mixer provides a conversion loss of 5 dB, a SSB noise figure of less than 8 dB, an IIP3 of 10 dBm and a LO-RF isolation of more than 45 dB. The circuit dissipates no DC power and no drain bias supply is necessary. The entirety of properties makes this circuit very favorable for all wireless applications.