Title :
2 GHz, 130 nm CMOS low noise amplifier for WCDMA
Author :
Pienkowski, Dariusz ; Circa, Radu ; Boeck, Georg
Author_Institution :
Microwave Eng. Group, Technische Univ. Berlin, Germany
Abstract :
This work presents a 2 GHz LNA designed for WCDMA mobiles. The circuit is implemented in a 0.13 μm CMOS technology. The design methodology is presented taking into consideration the influence of the pad capacitance on noise behaviour. The equivalent noise resistance can be lowered by this way. The designed amplifier shows 0.78 dB noise figure and 12 dB gain at 2.14 GHz for 3.5 mA supply current and 1.2 V supply voltage.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; broadband networks; code division multiple access; low noise amplifiers; 0.78 dB; 1.2 V; 12 dB; 130 nm; 2 GHz; 3.5 mA; CMOS technology; WCDMA mobiles; equivalent noise resistance; low noise amplifier; pad capacitance; CMOS technology; Capacitance; Circuit noise; Current supplies; Design methodology; Gain; Low-noise amplifiers; Multiaccess communication; Noise figure; Voltage;
Conference_Titel :
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN :
0-7803-9341-4
DOI :
10.1109/IMOC.2005.1580093
