DocumentCode
3083243
Title
2 GHz, 130 nm CMOS low noise amplifier for WCDMA
Author
Pienkowski, Dariusz ; Circa, Radu ; Boeck, Georg
Author_Institution
Microwave Eng. Group, Technische Univ. Berlin, Germany
fYear
2005
fDate
25-28 July 2005
Firstpage
107
Lastpage
111
Abstract
This work presents a 2 GHz LNA designed for WCDMA mobiles. The circuit is implemented in a 0.13 μm CMOS technology. The design methodology is presented taking into consideration the influence of the pad capacitance on noise behaviour. The equivalent noise resistance can be lowered by this way. The designed amplifier shows 0.78 dB noise figure and 12 dB gain at 2.14 GHz for 3.5 mA supply current and 1.2 V supply voltage.
Keywords
CMOS analogue integrated circuits; UHF amplifiers; broadband networks; code division multiple access; low noise amplifiers; 0.78 dB; 1.2 V; 12 dB; 130 nm; 2 GHz; 3.5 mA; CMOS technology; WCDMA mobiles; equivalent noise resistance; low noise amplifier; pad capacitance; CMOS technology; Capacitance; Circuit noise; Current supplies; Design methodology; Gain; Low-noise amplifiers; Multiaccess communication; Noise figure; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN
0-7803-9341-4
Type
conf
DOI
10.1109/IMOC.2005.1580093
Filename
1580093
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