DocumentCode
3083346
Title
Application of 3D stacking technology to SOI radiation image sensor
Author
Arai, Yutaro ; Motoyoshi, Mizuki
Author_Institution
Inst. of Particle & Nucl. Studies, Tsukuba, Japan
fYear
2013
fDate
12-15 Dec. 2013
Firstpage
5
Lastpage
8
Abstract
Next generation pixelated radiation image detector requires intelligent data processing within each pixel. Since the number of transistors implemented in the pixel area is limited, 3D stacking is indispensable technology in this kind of detector. We have fabricated a stacked SOI radiation image sensor by using μ-bump technology of 5 μm pitch. DC characteristics of transistors located in lower and upper tiers are successfully measured.
Keywords
bonding processes; fine-pitch technology; image sensors; integrated circuit manufacture; silicon-on-insulator; three-dimensional integrated circuits; μ-bump technology; 3D stacking technology; SOI radiation image sensor; data processing; next generation pixelated radiation image detector; size 5 mum; Detectors; Mechanical sensors; Semiconductor device measurement; Stacking; Three-dimensional displays; Transistors; 3D stacking; Pixel; Radiation detector; SOI;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location
Nara
Print_ISBN
978-1-4799-2313-7
Type
conf
DOI
10.1109/EDAPS.2013.6724443
Filename
6724443
Link To Document