Title :
Application of 3D stacking technology to SOI radiation image sensor
Author :
Arai, Yutaro ; Motoyoshi, Mizuki
Author_Institution :
Inst. of Particle & Nucl. Studies, Tsukuba, Japan
Abstract :
Next generation pixelated radiation image detector requires intelligent data processing within each pixel. Since the number of transistors implemented in the pixel area is limited, 3D stacking is indispensable technology in this kind of detector. We have fabricated a stacked SOI radiation image sensor by using μ-bump technology of 5 μm pitch. DC characteristics of transistors located in lower and upper tiers are successfully measured.
Keywords :
bonding processes; fine-pitch technology; image sensors; integrated circuit manufacture; silicon-on-insulator; three-dimensional integrated circuits; μ-bump technology; 3D stacking technology; SOI radiation image sensor; data processing; next generation pixelated radiation image detector; size 5 mum; Detectors; Mechanical sensors; Semiconductor device measurement; Stacking; Three-dimensional displays; Transistors; 3D stacking; Pixel; Radiation detector; SOI;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
DOI :
10.1109/EDAPS.2013.6724443
