DocumentCode
3083473
Title
Probability density calculation of step pulse responses at a 3-D IC channel with supply voltage fluctuations
Author
Jingook Kim ; Eunkyeong Park ; Junho Lee ; Kwansu Shon
Author_Institution
Sch. of ECE, Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
fYear
2013
fDate
12-15 Dec. 2013
Firstpage
28
Lastpage
31
Abstract
Causal transient step responses at a silicon interposer channel and at a wire-bond channel are calculated from the channel transfer functions obtained in frequency domain. Also, the probability densities of the step response with supply voltage fluctuations are analytically calculated.
Keywords
elemental semiconductors; lead bonding; silicon; three-dimensional integrated circuits; transfer functions; 3D IC channel; Si; channel transfer functions; probability densities; probability density calculation; silicon interposer channel; step pulse responses; wire-bond channel; Fluctuations; Integrated circuits; Silicon; Switches; Transfer functions; Transient analysis; Voltage fluctuations; 3-D IC; causality enforcement; interposer; probability density function; supply voltage fluctuations;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location
Nara
Print_ISBN
978-1-4799-2313-7
Type
conf
DOI
10.1109/EDAPS.2013.6724449
Filename
6724449
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