DocumentCode
3083602
Title
Modeling of light and bias stress induced defects in nc-Si:H TFTs
Author
Bauza, M.
Author_Institution
London Centre for Nanotechnol., London, UK
fYear
2009
fDate
25-25 Sept. 2009
Firstpage
1
Lastpage
12
Abstract
The paper presents a collection of slides that discusses the modeling of light and bias stress induced defects in nc-Si:H thin film transistors. The discussion includes experimental set up, modeling consideration, gate stress of photo-TFT and the instability mechanisms in nc-Si photo-TFT.
Keywords
elemental semiconductors; hydrogen; nanostructured materials; phototransistors; semiconductor device models; silicon; thin film transistors; Si:H; bias stress-induced defects; gate stress; instability mechanisms; light stress-induced defects; nanocrystalline silicon thin film transistors; photoTFT; Charge measurement; Current measurement; Degradation; Displays; Image sensors; Nanotechnology; Neodymium; Photovoltaic cells; Stress measurement; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location
London
Print_ISBN
978-1-4244-4373-4
Electronic_ISBN
978-1-4244-4374-1
Type
conf
DOI
10.1109/CTFT.2009.5379863
Filename
5379863
Link To Document