• DocumentCode
    3083612
  • Title

    On-chip decouplig capacitor preplacement for power integrity enhancement

  • Author

    Byunghyun Lee ; Youngsoo Lee

  • Author_Institution
    Syst. LSI Div., Samsung Electron. Inc., Yongin, South Korea
  • fYear
    2013
  • fDate
    12-15 Dec. 2013
  • Firstpage
    48
  • Lastpage
    51
  • Abstract
    With the rapid technology scaling, logic devices are more susceptible to power distribution network (PDN) power noise. To relieve power noise, traditionally the gate capacitance of transistor is used for on-chip decoupling capacitor (decap). In this paper, we investigate the power integrity characteristics of on-chip decap, such as power noise and current consumption, and propose the decap preplacement flow to relieve them. Compared to the non-preplacement approach, experimental results show the worst instantaneous voltage drop(IVD) can be reduced by about 7.16% and average supply current can be reduced by 3.05% by using preplacement scheme.
  • Keywords
    capacitance; capacitors; circuit noise; interconnections; logic devices; IVD; PDN power noise; current consumption; decap preplacement flow; gate capacitance; instantaneous voltage drop; logic devices; onchip decap; onchip decoupling capacitor; power distribution network; power integrity characteristics; preplacement scheme; transistor; Capacitance; Leakage currents; Noise; Power supplies; Resource management; Routing; System-on-chip; decoupling capactior; on-chip; power integrity; preplacement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
  • Conference_Location
    Nara
  • Print_ISBN
    978-1-4799-2313-7
  • Type

    conf

  • DOI
    10.1109/EDAPS.2013.6724454
  • Filename
    6724454