DocumentCode
3083612
Title
On-chip decouplig capacitor preplacement for power integrity enhancement
Author
Byunghyun Lee ; Youngsoo Lee
Author_Institution
Syst. LSI Div., Samsung Electron. Inc., Yongin, South Korea
fYear
2013
fDate
12-15 Dec. 2013
Firstpage
48
Lastpage
51
Abstract
With the rapid technology scaling, logic devices are more susceptible to power distribution network (PDN) power noise. To relieve power noise, traditionally the gate capacitance of transistor is used for on-chip decoupling capacitor (decap). In this paper, we investigate the power integrity characteristics of on-chip decap, such as power noise and current consumption, and propose the decap preplacement flow to relieve them. Compared to the non-preplacement approach, experimental results show the worst instantaneous voltage drop(IVD) can be reduced by about 7.16% and average supply current can be reduced by 3.05% by using preplacement scheme.
Keywords
capacitance; capacitors; circuit noise; interconnections; logic devices; IVD; PDN power noise; current consumption; decap preplacement flow; gate capacitance; instantaneous voltage drop; logic devices; onchip decap; onchip decoupling capacitor; power distribution network; power integrity characteristics; preplacement scheme; transistor; Capacitance; Leakage currents; Noise; Power supplies; Resource management; Routing; System-on-chip; decoupling capactior; on-chip; power integrity; preplacement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location
Nara
Print_ISBN
978-1-4799-2313-7
Type
conf
DOI
10.1109/EDAPS.2013.6724454
Filename
6724454
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