DocumentCode :
3083703
Title :
A fully integrated 2.7 V 0.35 /spl mu/m CMOS VCO for 5 GHz wireless applications
Author :
Kinget, P.
Author_Institution :
Bell Labs., Lecent Technol., Murray Hill, NJ, USA
fYear :
1998
fDate :
5-7 Feb. 1998
Firstpage :
226
Lastpage :
227
Abstract :
The wireless market drives the integration of RF circuits on common digital CMOS technologies. Full integration of the tank circuit, low-phase noise and high current efficiency are desirable for voltage-controlled oscillator (VCO) circuits. The design of fully-integrated non-relaxation VCOs in modern digital technologies is limited by the lack of high-quality passive components. For example, the quality of on-chip inductors is severely limited due to ohmic losses, especially in common CMOS technologies with low-resistivity substrates. Using transistor parasitics as tank capacitors, large active devices can be used in the VCO so current efficiency is optimized while phase-noise performance and a high center frequency are maintained. For a 0.7-2.7 V tune voltage range, a 200 MHz or 4.3% tuning range is available. This VCO can be used for 5 GHz wireless applications with a typical IF frequency of several hundred MHz.
Keywords :
CMOS analogue integrated circuits; 0.35 micron; 0.7 to 2.7 V; 5 GHz; CMOS VCO IC; SHF wireless applications; digital CMOS technolog; low-phase noise; tank capacitors; tank circuit; transistor parasitics; voltage-controlled oscillator; CMOS technology; Capacitors; Frequency estimation; Inductors; Integrated circuit technology; Phase noise; Q factor; Resistors; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-4344-1
Type :
conf
DOI :
10.1109/ISSCC.1998.672446
Filename :
672446
Link To Document :
بازگشت