Improved parameter extraction method for GaN HEMT on Si substrate

Author

Jarndal, Anwar ; Markos, Asdesach Zena ; Kompa, Güunter

Author_Institution

Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen

fYear

2010

fDate

23-28 May 2010

Firstpage

1668

Lastpage

1671

Abstract

An improved parasitic elements extraction method applied to GaN on Si devices is presented. Genetic-algorithm based procedure is used to determine a high quality reliable starting values for the extrinsic parameters of proposed small-signal model. Local optimization technique is then used to refine the initial value and find the optimal value for each model element. The validity of the developed method and the proposed small-signal model is verified by comparing simulated small-signal S-parameters with measured ones of a 2-mm (10×200 μm) GaN HEMT-on-Si.

Keywords

III-V semiconductors; gallium compounds; genetic algorithms; high electron mobility transistors; semiconductor device models; silicon; wide band gap semiconductors; GaN:Si; genetic algorithm; high electron mobility transistors; local optimization; parasitic elements extraction; small-signal S-parameters; small-signal model; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gallium nitride; HEMTs; Microwave devices; Parameter extraction; Scattering parameters; Semiconductor device modeling; Substrates; GaN HEMT; genetic optimization; parameter extraction; semiconductor device modeling; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5514666

Filename

5514666