Title :
Thin film transistors on nanostructured layers prepared by nanowire lithography
Author_Institution :
Nokia Res. Centre Cambridge, Cambridge, UK
Abstract :
The presentation of slides shows the method of fabricating large area nanostructured thin film transistors (TFT) on a wide range of material with the use of an excellent method called the NWL (nanowire lithography). A film of interconnected NWs (or nanowire) can significantly alter the properties of the bulk material, generating the potential for expanded TFT performance and functionalities.
Keywords :
nanofabrication; nanolithography; nanostructured materials; nanowires; thin film transistors; bulk material property; nanostructured TFT fabrication; nanostructured layers; nanowire lithography; thin film transistors; Lithography; Thin film transistors;
Conference_Titel :
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location :
London
Print_ISBN :
978-1-4244-4373-4
Electronic_ISBN :
978-1-4244-4374-1
DOI :
10.1109/CTFT.2009.5379875