DocumentCode :
3083862
Title :
Thin film transistors on nanostructured layers prepared by nanowire lithography
Author :
Colli, A.
Author_Institution :
Nokia Res. Centre Cambridge, Cambridge, UK
fYear :
2009
fDate :
25-25 Sept. 2009
Firstpage :
1
Lastpage :
16
Abstract :
The presentation of slides shows the method of fabricating large area nanostructured thin film transistors (TFT) on a wide range of material with the use of an excellent method called the NWL (nanowire lithography). A film of interconnected NWs (or nanowire) can significantly alter the properties of the bulk material, generating the potential for expanded TFT performance and functionalities.
Keywords :
nanofabrication; nanolithography; nanostructured materials; nanowires; thin film transistors; bulk material property; nanostructured TFT fabrication; nanostructured layers; nanowire lithography; thin film transistors; Lithography; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location :
London
Print_ISBN :
978-1-4244-4373-4
Electronic_ISBN :
978-1-4244-4374-1
Type :
conf
DOI :
10.1109/CTFT.2009.5379875
Filename :
5379875
Link To Document :
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