Numerical analysis of light-trapping structure in nanoimprinted-textured silicon solar cell

Author

Yoshinaga, Satoshi ; Ishikawa, Yozo ; Araki, Shunsuke ; Uraoka, Y.

Author_Institution

Nara Inst. of Sci. & Technol. (NAIST), Ikoma, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

24

Lastpage

25

Abstract

We calculated the light trapping effect of nanoimprinted-textured (NT) structure for monocrystalline silicon solar cell using 2-dimentional simulator. Our calculation revealed that the 10 μm width for textured pyramid, in the case of ZnO used as a NT material, produced lower efficiency than the cell without NT structure, due to the light absorbance in the ZnO layer in short length region. On the other hand, ZrO₂-NT cell performance showed the highest efficiency of 23 %. In addition, we found the optimized texture width was 0.25 μm for both materials.

Keywords

elemental semiconductors; nanostructured materials; numerical analysis; silicon; solar cells; zinc compounds; zirconium compounds; 2-dimentional simulator; Si; ZnO; ZnO layer; ZrO₂; light trapping structure; monocrystalline silicon solar cell; nanoimprinted-textured silicon solar cell; nanoimprinted-textured structure; numerical analysis; textured pyramid; Charge carrier processes; Finite difference methods; Photovoltaic cells; Silicon; Time-domain analysis; Zinc oxide; light trapping effect; monocrystalline silicon solar cell; nanoimprint lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602223

Filename

6602223