• DocumentCode
    3084307
  • Title

    Influence of a pocket doping in a Schottky tunneling FET

  • Author

    Guin, Shilpi ; Chattopadhyay, Abhiroop ; Karmakar, A. ; Mallik, Abhidipta

  • Author_Institution
    Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
  • fYear
    2013
  • fDate
    5-6 June 2013
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.
  • Keywords
    Schottky barriers; field effect transistors; semiconductor doping; tunnelling; SBTFET; Schottky-barrier tunneling FET; pocket doping; Doping; Logic gates; Silicon; Tunneling; Parasitic resistance; Schottky-barrier tunneling FET (SBTFET); short-channel effects; subthreshold swing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
  • Conference_Location
    Suita
  • Print_ISBN
    978-1-4673-6106-4
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2013.6602225
  • Filename
    6602225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3084307