DocumentCode :
3084316
Title :
New four-phase generation circuits for low-voltage charge pumps
Author :
Lin, Hongchin ; Chen, Nai-Hsien
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Volume :
1
fYear :
2001
fDate :
6-9 May 2001
Firstpage :
504
Abstract :
A new four-phase clock generator for the four-phase charge pumping circuits for very low supply voltages using 0.5 μm double poly CMOS technology to generate high boosted voltages is presented. With the new clock generator, the ten-stage charge pump can efficiently pump to 9 V at supply voltage of 1 V
Keywords :
CMOS digital integrated circuits; clocks; low-power electronics; 0.5 micron; 1 V; 9 V; double poly CMOS technology; four-phase clock generator; low-voltage charge pumping circuit; CMOS technology; Charge pumps; Circuits; Clocks; Degradation; Low voltage; MOSFETs; Random access memory; Resistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
Type :
conf
DOI :
10.1109/ISCAS.2001.921903
Filename :
921903
Link To Document :
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