DocumentCode :
3084417
Title :
Low voltage high linearity CMOS up-conversion mixer for LTE applications
Author :
Yuan-Hao Shu ; Jeng-Rern Yang
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ., Jhongli, Taiwan
fYear :
2013
fDate :
5-6 June 2013
Firstpage :
44
Lastpage :
45
Abstract :
The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.
Keywords :
CMOS integrated circuits; Long Term Evolution; mixers (circuits); DS method; Gilbert cell mixer; IIP3; LTE applications; Long Term Evolution; derivative superposition; low voltage high linearity CMOS up-conversion mixer; small-cell base stations; source degeneration resistor; standard CMOS process; third-order intercept point; wireless applications; Mixers; Radio frequency; high linearity; low voltage; mixer; up-conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
Type :
conf
DOI :
10.1109/IMFEDK.2013.6602232
Filename :
6602232
Link To Document :
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