V/Al-based ohmic contact formation to n-GaN using low temperature annealing

Author

Tone, K. ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

50

Lastpage

51

Abstract

We describe the dependence of annealing temperature on the ohmic contact resistance for n-type GaN layers having ohmic metal stacks of V/Al/Mo/Au and Ti/Al/Mo/Au. Measurement results indicated that the contact resistance for V/Al/Mo/Au with a doping level of 2×10¹⁸ cm^-3 was 0.35 Ωmm after annealing at 600 °C, while that for Ti/Al/Mo/Au did not show good ohmic behaviors after annealing below 650 °C. These results indicate that V/Al/Mo/Au is a good alternative to Ti/Al/Mo/Au and is suited for low-temperature annealing. Interdiffusion of metals during annealing studied by Auger electron spectroscopy will be also discussed.

Keywords

Auger electron spectroscopy; III-V semiconductors; aluminium; annealing; chemical interdiffusion; doping profiles; gallium compounds; gold; molybdenum; ohmic contacts; vanadium; wide band gap semiconductors; Auger electron spectroscopy; GaN; V-Al-Mo-Au-GaN; doping level; interdiffusion; low temperature annealing; ohmic contact formation; ohmic contact resistance; ohmic metal stacks; temperature 600 degC; Annealing; Contact resistance; Gallium nitride; Gold; Ohmic contacts; Temperature measurement; V-Al based; n-type GaN; ohmic contact;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602235

Filename

6602235