DocumentCode :
3084512
Title :
I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures
Author :
Ui, Toshimasa ; Kudo, Motoi ; Suzuki, Toshi-kazu
Author_Institution :
Center for Nano Mater. & Technol., Japan Adv. Inst. of Sci. & Technol. (JAIST), Nomi, Japan
fYear :
2013
fDate :
5-6 June 2013
Firstpage :
54
Lastpage :
55
Abstract :
We investigated I-V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures, in which AlxTiyO thin films were prepared by atomic layer deposition utilizing alternative supply of Al2O3 and TiO2 precursors. From Poole-Frenkel plots, we estimated dielectric constants of AlxTiyO thin films, which are useful as high-k dielectrics for III-V device processing.
Keywords :
MIM structures; Poole-Frenkel effect; aluminium compounds; atomic layer deposition; gallium arsenide; high-k dielectric thin films; permittivity; AlxTiyO-GaAs; GaAs; Poole-Frenkel plots; atomic layer deposition; dielectric constants; high-k dielectrics; metal-insulator-semiconductor structures; thin films; Aluminum oxide; Dielectric constant; High K dielectric materials; III-V semiconductor materials; Insulators; Substrates; AlxTiyO/GaAs(001); I–V characteristics; III–V metal-insulator-semiconductor (MIS); Poole-Frenkel plot;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
Type :
conf
DOI :
10.1109/IMFEDK.2013.6602237
Filename :
6602237
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3084512
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