Electrical characterization of AlGaN/GaN HEMTs fabricated on CF4-plasma-treated AlGaN surface

Author

Sakaida, Yuki ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

58

Lastpage

59

Abstract

In this work, we have studied the mechanism of the threshold voltage shift for AlGaN/GaN HEMTs by exposing the AlGaN surface to CF₄ plasma. The CF₄ plasma treatment on AlGaN/GaN heterostructures resulted in the decrease in two-dimensional electron gas density. Careful observation on the AlGaN surface indicated that the AlGaN surface was slightly etched after CF₄ plasma exposure. The rate of n_s decrease was much larger than that calculated by assuming surface AlGaN etching, indicating that the threshold voltage of the AlGaN/GaN heterostructure was also shifted by the effects of F ion implantation into the AlGaN surface layer.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; ion implantation; organic compounds; plasma materials processing; two-dimensional electron gas; wide band gap semiconductors; AlGaN surface layer; AlGaN-GaN; AlGaN/GaN heterostructure; CF₄ plasma exposure; CF₄ plasma treatment; F ion implantation; HEMT; electrical characterization; high electron mobility transistors; surface AlGaN etching; threshold voltage shift; two dimensional electron gas density; Artificial intelligence; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN; CF4; HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602239

Filename

6602239