Title :
Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures
Author :
Kobayashi, Yoshiyuki ; Saito, Takashi ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; tunnel diodes; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; 2DEG; AlGaN-GaN; AlGaN-GaN heterostructures; GaN channel layer; Schottky electrodes; Schottky source; conduction current components; current path; device structures; electrical charaterization; lateral tunnel diodes; lateral tunnel junctions; nonrecessed ohmic drain; Aluminum gallium nitride; Gallium nitride; HEMTs; Junctions; MODFETs; Schottky diodes; Tunneling; AlGaN/GaN heterostructures; TJ-FET; lateral tunnel junctions;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602242
