Title :
High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates
Author :
Akira, K. ; Asano, Takashi ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 μm exhibited a linear increase with increasing the gate-to-drain distance (Lgd), reaching more than 1200 V at Lgd=25 μm. It was found that the ON/OFF ratio in the drain current was only 104, indicating the need for further improvements in buffer structure design.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; substrates; wide band gap semiconductors; AlGaN-GaN; DC characteristics; ON/OFF ratio; buffer structure design; drain current; free-standing substrate; gate length; gate-to-drain distance; high electron mobility transistors; high-voltage HEMT; terminal breakdown voltage; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; MODFETs; Silicon carbide; Substrates; AlGaN/GaN; HEMT; breakdown voltage; free-standing GaN;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602244
