Title :
Enhancement of photoluminescence due to one-dimensional photonic crystal
Author :
Shobudani, Kohei ; Morifuji, Masato
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We report on interplay between photonic crystal and photoluminescence in a one-dimensional photonic crystal. The one-dimensional photonic crystal reflects light within a certain range of wavelength. This range of wavelength is called photonic band gap. We measured reflectivity by changing incident angle of probe light, so as to shift the region of large reflectivity. We found that photoluminescence is observed only when PL wavelength falls in the photonic band gap. This result indicates that PL is intensified due to photonic crystal.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; multilayers; photoluminescence; photonic band gap; photonic crystals; photoreflectance; semiconductor epitaxial layers; GaAs-AlxGa1-xAs; multilayer; one-dimensional photonic crystal; photoluminescence enhancement; photonic band gap; probe light incident angle; reflectivity; semiconductor epitaxial layers; Gallium arsenide; Photoluminescence; Photonic band gap; Probes; Reflectivity; Wavelength measurement; photoluminescence; photonic band gap;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602245
