Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability

Author

Kawahara, H. ; Tahara, Naoya ; Nomura, Shunji ; Yamashita, Katsumi ; Noda, Masaki ; Uchida, Hironaga ; Funakubo, H.

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

80

Lastpage

81

Abstract

SrBi₄Ti₄O₁₅ (SBTi) and CaBi₄Ti₄O₁₅ (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.

Keywords

bismuth compounds; calcium compounds; leakage currents; strontium compounds; thin film capacitors; titanium compounds; Schottky current; SrBi₄Ti₄O₁₅-CaBi₄Ti₄O₁₅; bismuth layered structure dielectrics; capacitor device; dielectric films; electric stability; high permittivity capacitor; leakage current; perovskite film; stacked-type dielectric capacitors; thin-film capacitor; Bismuth; Capacitors; Electric fields; Films; Gold; Leakage currents; Thermal stability; Bismuth Layered Structure Dielectrics (BLSD); electric stability; film capacitor; leakage current;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602250

Filename

6602250