Title :
Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability
Author :
Kawahara, H. ; Tahara, Naoya ; Nomura, Shunji ; Yamashita, Katsumi ; Noda, Masaki ; Uchida, Hironaga ; Funakubo, H.
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.
Keywords :
bismuth compounds; calcium compounds; leakage currents; strontium compounds; thin film capacitors; titanium compounds; Schottky current; SrBi4Ti4O15-CaBi4Ti4O15; bismuth layered structure dielectrics; capacitor device; dielectric films; electric stability; high permittivity capacitor; leakage current; perovskite film; stacked-type dielectric capacitors; thin-film capacitor; Bismuth; Capacitors; Electric fields; Films; Gold; Leakage currents; Thermal stability; Bismuth Layered Structure Dielectrics (BLSD); electric stability; film capacitor; leakage current;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602250
