Titanium corrosion in 0.25 μm metal interconnects

Author

Koh, Leong-Tee ; Chok, Kho-Liep ; Li, He Ming ; Chooi, Simon Y.M.

Author_Institution

Dept. of Deep Submicron Integrated Circuit, Inst. of Microelectron., Singapore

fYear

1999

fDate

1999

Firstpage

47

Lastpage

49

Abstract

This paper studies the effect of post-metal etch wet polymer cleaning on the via resistance of design structures with various enclosures of overlying metal film stacks in prevailing tungsten (W) plugged vias. We observed a new via failure mechanism of enhanced galvanic corrosion of the Ti adhesion layer (anode) immediately overlying the exposed W via (cathode) during the strip process. We solved the high via resistance issue by using an alternative strip chemical which is considered to be an inactive electrolyte for the galvanic reaction between the Ti glue layer sidewall edge and exposed W via

Keywords

corrosion; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; surface chemistry; surface cleaning; titanium; 0.25 micron; Ti adhesion layer; Ti glue layer sidewall edge; W plugged vias; W-Ti; design structures; enhanced galvanic corrosion; exposed W via; galvanic reaction; inactive electrolyte; metal interconnects; overlying metal film stacks; post-metal etch wet polymer cleaning; strip chemical; strip process; titanium corrosion; tungsten plugged vias; via failure mechanism; via resistance; Adhesives; Cleaning; Corrosion; Failure analysis; Galvanizing; Polymer films; Strips; Titanium; Tungsten; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787074

Filename

787074