Title :
Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory
Author :
Hamada, Yasuhiro ; Kato, Toshihiko ; Otsuka, Shota ; Shimizu, Tsuyoshi ; Shingubara, S.
Author_Institution :
Grad. Sch. of Sci. & Eng., Kansai Univ., Suita, Japan
Abstract :
Investigation of I-V characteristic and temperature dependence of resistance in the resistive switching (RS) memory with NiO insulater was performed. Unipolar operation mode was obtained in this device. From temperature dependence of resistance, it is suggested that the low resistance state (LRS) is metallic conduction and the high resistance state (HRS) is variable-range hopping (VRH) conduction.
Keywords :
electric resistance; electrical resistivity; nickel compounds; random-access storage; HRS; I-V characteristic; LRS; NiO; RS memory; ReRAM; VRH conduction; conductive filament; high resistance state; insulator; low resistance state; metallic conduction; resistive switching memory; temperature dependence; unipolar operation mode; variable-range hopping conduction; Capacitance; Electrodes; Nickel; Resistance; Switches; Temperature dependence; Temperature measurement; NiO; ReRAM; temperature dependences;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602253
