Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory

Author

Hamada, Yasuhiro ; Kato, Toshihiko ; Otsuka, Shota ; Shimizu, Tsuyoshi ; Shingubara, S.

Author_Institution

Grad. Sch. of Sci. & Eng., Kansai Univ., Suita, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

86

Lastpage

87

Abstract

Investigation of I-V characteristic and temperature dependence of resistance in the resistive switching (RS) memory with NiO insulater was performed. Unipolar operation mode was obtained in this device. From temperature dependence of resistance, it is suggested that the low resistance state (LRS) is metallic conduction and the high resistance state (HRS) is variable-range hopping (VRH) conduction.

Keywords

electric resistance; electrical resistivity; nickel compounds; random-access storage; HRS; I-V characteristic; LRS; NiO; RS memory; ReRAM; VRH conduction; conductive filament; high resistance state; insulator; low resistance state; metallic conduction; resistive switching memory; temperature dependence; unipolar operation mode; variable-range hopping conduction; Capacitance; Electrodes; Nickel; Resistance; Switches; Temperature dependence; Temperature measurement; NiO; ReRAM; temperature dependences;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602253

Filename

6602253