Title :
RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill
Author :
Zhiping Feng ; Wenge Zhang ; Bingzhi Su ; Gupta, K.C. ; Lee, Y.C.
Author_Institution :
NSF Center for Adv. Manuf. & Packaging of Microwave, Opt., & Digital Electron., Colorado Univ., Boulder, CO, USA
Abstract :
RF characterization of flip-chip interconnects in CPW circuits with underfill has been investigated by measuring the scattering-parameters up to 40 GHz for GaAs coplanar waveguide (CPW) through line chips flip-chip mounted on alumina substrate with and without underfill epoxy. Fatigue life of flip-chip assemblies has been computed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/mm-wave frequency range.
Keywords :
III-V semiconductors; S-parameters; coplanar waveguides; encapsulation; fatigue; flip-chip devices; gallium arsenide; waveguide components; 40 GHz; Al/sub 2/O/sub 3/; CPW circuit; GaAs; GaAs coplanar waveguide; RF characteristics; alumina substrate; fatigue life; flip-chip interconnect; mechanical characteristics; scattering parameters; underfill epoxy encapsulant; Assembly; Bonding; Circuit testing; Coplanar waveguides; Fatigue; Frequency measurement; Gallium arsenide; Integrated circuit interconnections; Radio frequency; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700834
