RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill

Author

Zhiping Feng ; Wenge Zhang ; Bingzhi Su ; Gupta, K.C. ; Lee, Y.C.

Author_Institution

NSF Center for Adv. Manuf. & Packaging of Microwave, Opt., & Digital Electron., Colorado Univ., Boulder, CO, USA

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1823

Abstract

RF characterization of flip-chip interconnects in CPW circuits with underfill has been investigated by measuring the scattering-parameters up to 40 GHz for GaAs coplanar waveguide (CPW) through line chips flip-chip mounted on alumina substrate with and without underfill epoxy. Fatigue life of flip-chip assemblies has been computed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/mm-wave frequency range.

Keywords

III-V semiconductors; S-parameters; coplanar waveguides; encapsulation; fatigue; flip-chip devices; gallium arsenide; waveguide components; 40 GHz; Al/sub 2/O/sub 3/; CPW circuit; GaAs; GaAs coplanar waveguide; RF characteristics; alumina substrate; fatigue life; flip-chip interconnect; mechanical characteristics; scattering parameters; underfill epoxy encapsulant; Assembly; Bonding; Circuit testing; Coplanar waveguides; Fatigue; Frequency measurement; Gallium arsenide; Integrated circuit interconnections; Radio frequency; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700834

Filename

700834