Title :
A self-compliance RRAM device for high density cross-point array applications
Author :
Feiyang Huang ; Huaqiang Wu ; Xinyi Li
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
RRAM devices with AlOδ/Ta2O5-x/TaOy triple-layer structure were fabricated and electrically characterized. DC sweeping measurements without external current compliance were carried out at temperatures ranging from -10°C to 110°C. Stable self-compliance property was observed. More than 1010 cycles pulse programming operations without external current limit element were demonstrated. Those cells showed no data retention deterioration for more than 3 hours at 150°C.
Keywords :
aluminium compounds; resistive RAM; tantalum compounds; AlOδ-Ta2O5-x-TaOy; DC sweeping measurement; current limit element; data retention deterioration; external current compliance; high density crosspoint array application; pulse programming; resistive random access memory; self-compliance RRAM device; temperature -10 C to 110 C; triple-layer structure; Current measurement; Performance evaluation; Thickness measurement; Voltage measurement;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153328
