Title :
MOCVD TiN diffusion barriers for copper interconnects
Author :
Choe, H.S. ; Danek, M.
Author_Institution :
Novellus Syst. Inc., San Jose, CA, USA
Abstract :
Copper barrier effectiveness of ultra-thin 100 Å MOCVD titanium nitride (TiN) and silane treated titanium nitride (TiN:Si) films was investigated and compared to the industry standard 150 Å PVD Ta barrier. The metallurgical stability of the film and barrier failure was determined by sheet resistance change, optical and electron microscopy after Secco etch and C-V measurements. Copper drift through the barrier was tested under bias temperature stress conditions (200°C and 2 MV/cm) using leakage current vs. time measurement on MOS capacitors
Keywords :
MOCVD; MOS capacitors; capacitance; chemical interdiffusion; copper; diffusion barriers; electric resistance; electron microscopy; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; leakage currents; optical microscopy; thermal stresses; titanium compounds; vapour phase epitaxial growth; 100 angstrom; 150 angstrom; 200 C; C-V measurements; Cu-Ta; Cu-TiN; Cu-TiN:Si; MOCVD TiN diffusion barriers; MOCVD TiN films; MOCVD TiN:Si films; MOCVD silane treated titanium nitride films; MOCVD titanium nitride films; MOS capacitors; PVD Ta barrier; Secco etch; barrier failure; bias temperature stress conditions; copper barrier effectiveness; copper drift; copper interconnects; electron microscopy; leakage current; metallurgical stability; optical microscopy; sheet resistance; time measurement; Atherosclerosis; Copper; Electron optics; MOCVD; Metals industry; Optical films; Optical microscopy; Stability; Tin; Titanium;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787079
