Title :
MEMS microphones on InP substrates for high performance digital ultrasonic sensors
Author :
Fujino, Shunya ; Mizuno, Yosuke ; Takaoka, Kazuhiro ; Mori, Marco ; Maezawa, K.
Author_Institution :
Grad. Sch. of Sci. & Eng., Univ. of Toyama, Toyama, Japan
Abstract :
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone ashing of the photoresist to fabricate a hollow structure. This process was demonstrated to be damage-free, and suitable for integration with HEMTs.
Keywords :
III-V semiconductors; analogue-digital conversion; delta-sigma modulation; high electron mobility transistors; indium compounds; microphones; microsensors; photoresists; ultrasonic transducers; HEMT; InP; InP substrates; MEMS microphones; digital ultrasonic sensors; hollow structure; ozone ashing; photoresist; Frequency modulation; HEMTs; Indium phosphide; MODFETs; Micromechanical devices; Microphones; Sensors; InP; analog-to-digital converter; condenser microphone; delta-sigma modulation; high electron mobility transistor; ultrasonic sensor;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602256
