Title :
Copper post-CMP brush cleaning
Author :
Elbel, Norbert ; Wang, Shumin ; Sänger, Annette ; Hadawi, Dariusch ; Held, Chuck
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
Both metallic and abrasive particle cleaning after Cu CMP processing was studied. Two chemical (citric acid and K2-EDTA) based cleaning systems were evaluated as functions of concentration and pH. Results of <5×1010 at/cm 2 for Cu contamination were achieved with both optimized systems. Cu was presented on the wafer surface in the form of a homogeneous film, yet alumina was detected in both localized particle and thin film form. No Cu corrosion or surface roughening were detected after the cleaning process
Keywords :
copper; corrosion; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; surface cleaning; surface contamination; surface topography; Al2O3-SiO2; Cu; Cu CMP processing; Cu contamination; Cu corrosion; Cu homogeneous film; Cu post-CMP brush cleaning; Cu surface roughening; Cu-SiO2; K2-EDTA based cleaning system; SiO2; abrasive particle cleaning; alumina localized particles; alumina thin films; citric acid based cleaning system; cleaning solution concentration; cleaning solution pH; copper post-CMP brush cleaning; metallic particle cleaning; optimized systems; wafer surface; Abrasives; Brushes; Chemicals; Cleaning; Copper; Corrosion; Rough surfaces; Surface contamination; Surface roughness; Transistors;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787084
