Title :
Thermal impact and process diagnosis of copper chemical mechanical polish
Author :
Chiou, Hung-Wen ; Lin, Zong-Huei ; Kuo, Liang-Hsuan ; Shih, Shing-Yih ; Chen, Lai-Juh ; Hsia, Chin
Author_Institution :
Div. of Deep Submicron Technol., ERSO/ITRI, Hsinchu, Taiwan
Abstract :
To effectively improve and control copper polish performance, a thermal impact study and a process diagnosis methodology were explored and proposed in this paper for 0.18 μm technology and beyond. Micro and macro thermal impacts on polishing of copper damascene wafers with trench structures were investigated by studying basic chemical kinetics of some mature copper slurries. Infrared thermal camera techniques were employed to in-situ monitor the macro thermal impact responses of the polish pad. Based on these responses, a process diagnosis algorithm was deduced for diagnosis of copper polish nonuniformity at the end of each polish. Several experiments have demonstrated the usefulness of these methodologies
Keywords :
chemical mechanical polishing; copper; infrared imaging; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; isolation technology; process monitoring; reaction kinetics; thermal analysis; 0.18 micron; Cu; chemical kinetics; copper chemical mechanical polish; copper damascene wafers; copper polish nonuniformity; copper polish performance; copper slurries; in-situ monitoring; infrared thermal camera techniques; macro thermal impact; macro thermal impact response; micro thermal impact; polish pad; polishing; process diagnosis; process diagnosis algorithm; process diagnosis methodology; thermal impact; trench structures; Cameras; Chemical processes; Chemical technology; Copper; Equations; Etching; Kinetic theory; Silicon; Slurries; Temperature;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787085
